Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact cross references
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United States of America Patent
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Jan 23, 2018
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N/A
app pub date -
May 16, 2017
filing date -
Sep 1, 2011
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Abstract
Embodiments disclosed herein may include depositing a storage component material over and/or in a trench in a dielectric material, including depositing the storage component material on approximately vertical walls of the trench and a bottom of the trench. Embodiments may also include etching the storage component material so that at least a portion of the storage component material remains on the approximately vertical walls and the bottom of the trench, wherein the trench is contacting an electrode and a selector such that storage component material on the bottom of the trench contacts the electrode.
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