High yield RRAM cell with optimized film scheme
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United States of America Patent
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Jan 23, 2018
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Jan 8, 2015
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Apr 2, 2014
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Abstract
The present disclosure relates to a method of forming a resistive random access memory (RRAM) cell having a good yield, and an associated apparatus. In some embodiments, the method is performed by forming a bottom electrode over a lower metal interconnect layer, and forming a variable resistance dielectric data storage layer having a first thickness onto the bottom electrode. A capping layer is formed onto the dielectric data storage layer. The capping layer has a second thickness that is in a range of between approximately 2 to approximately 3 times thicker than the first thickness. A top electrode is formed over the capping layer, and an upper metal interconnect layer is formed over the top electrode.
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