Phase change memory cell and manufacturing method thereof using minitrenches
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United States of America Patent
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Jan 23, 2018
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app pub date -
Jun 10, 2011
filing date -
Feb 20, 2002
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Abstract
A process forms a phase change memory cell using a resistive element and a memory region of a phase change material. The resistive element has a first thin portion having a first sublithographic dimension in a first direction; and the memory region has a second thin portion having a second sublithographic dimension in a second direction transverse to the first dimension. The first thin portion and the second thin portion are in direct electrical contact and define a contact area of sublithographic extension. The second thin portion is delimited laterally by oxide spacer portions surrounded by a mold layer which defines a lithographic opening. The spacer portions are formed after forming the lithographic opening, by a spacer formation technique.
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