Method for forming patterns and method for manufacturing magnetic memory device using the same

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United States of America Patent

PATENT NO 9876165
SERIAL NO

15180843

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Abstract

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A method for forming a pattern, the method including forming an etch target layer on a substrate; patterning the etch target layer to form patterns; and performing a pre-oxidation trim process a plurality of times, the pre-oxidation trim process including performing an oxidation process to form an insulating layer on a sidewall of each of the patterns; and performing a sputter etch process to remove at least a portion of the insulating layer.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTDGYEONGGI DO SOUTH KOREA GYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Baek, Gwang-Hyun Seoul, KR 13 139
Kim, Inho Suwon-si, KR 61 300
Kim, Jong-Kyu Seongnam-si, KR 105 1856
Kim, Sang-Kuk Seongnam-si, KR 21 110
Oh, Jung-Ik Hwaseong-si, KR 18 314
Park, Jongchul Seongnam-si, KR 88 641

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