Electronic device including a semiconductor memory having variable resistance structure with magnetic correction layer
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United States of America Patent
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Jan 23, 2018
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Feb 19, 2016
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Jul 24, 2015
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Abstract
This technology provides an electronic device. An electronic device in accordance with an implementation of this document includes a semiconductor memory, and the semiconductor memory may include a substrate; a plurality of structures formed over the substrate to be spaced apart from each other, each structure comprising a free layer having a variable magnetization direction, a pinned layer having a pinned magnetization direction, and a tunnel barrier layer interposed between the free layer and the pinned layer; and a magnetic correction layer formed adjacent to the plurality of structures and structured to reduce an influence to the free layer by a stray magnetic field generated by the pinned layer.
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