Ultraviolet light emitting device doped with boron
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United States of America Patent
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Jan 23, 2018
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app pub date -
Oct 1, 2014
filing date -
Oct 1, 2014
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Abstract
In an example, the present invention provides a light-emitting device configured to emit electromagnetic radiation in a range of 210 to 360 nanometers. The device has a substrate member comprising a surface region. The device has a thickness of AlGaN material formed overlying the surface region and an aluminum concentration characterizing the AlGaN material having a range of 0 to 100%. The device has a boron doping concentration characterizing the AlGaN material having a range between 1e15 to 1e20 atoms/centimeter3.
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