Semiconductor light emitting device
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United States of America Patent
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Jan 23, 2018
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app pub date -
May 13, 2016
filing date -
May 18, 2015
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Abstract
A semiconductor light emitting device includes: an n-type layer; a p-type layer; and an emission layer interposed between the n-type layer and the p-type layer and having a multiple quantum well (MQW) structure in which barrier layers and quantum well layers are alternately stacked over a plurality of periods, wherein n-type impurity concentrations of the barrier layers disposed up to a predetermined α-th layer (where α is a natural number), when counting from the p-type layer, are smaller than an n-type impurity concentration of the barrier layer disposed at an (α+1)-th layer counting from the p-type layer.
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