Backside-illuminated photodetector structure and method of making the same
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United States of America Patent
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Jan 23, 2018
Issued Date -
N/A
app pub date -
Nov 22, 2013
filing date -
Nov 22, 2013
priority date (Note) -
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status (Latency Note)
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Abstract
A backside-illuminated photodetector structure comprising a first reflecting region, a second reflecting region and a semiconductor region. The semiconductor region is between the first reflecting region and the second reflecting region. The semiconductor region comprises a first doped region and a second doped region.
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International Classification(s)
- 2013 Application Filing Year
- H01L Class
- 22267 Applications Filed
- 20713 Patents Issued To-Date
- 93.03 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
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| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jul 23, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jul 23, 2029 |
