Semiconductor device and semiconductor device manufacturing method
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United States of America Patent
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Jan 23, 2018
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N/A
app pub date -
May 11, 2015
filing date -
May 12, 2014
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Abstract
This semiconductor device includes: a semiconductor layer that is formed of first conductivity-type SiC; a plurality of trenches that are formed in the semiconductor layer; second conductivity-type column regions that are formed along the inner surfaces of the trenches; a first conductivity-type column region that is disposed between the adjacent second conductivity-type column regions; and insulating films that are embedded in the trenches. The semiconductor device is capable of improving a withstand voltage by means of a super junction structure. The semiconductor device may also include an electric field attenuation section for attenuating electric field intensity of a surface section of the first conductivity-type column region.
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