Semiconductor device and manufacturing method thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 23, 2018
Issued Date -
N/A
app pub date -
Mar 10, 2016
filing date -
Oct 5, 2011
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An oxide semiconductor film is formed over a substrate, a film of a semiconductor other than an oxide semiconductor is formed over the oxide semiconductor film, and then an oxygen atom in the oxide semiconductor film and an atom in the film of a semiconductor are bonded to each other at an interface between the oxide semiconductor film and the film of a semiconductor. Accordingly, the interface can be made continuous. Further, oxygen released from the oxide semiconductor film is diffused into the film of a semiconductor, so that the film of a semiconductor can be oxidized to form an insulating film. The use of the gate insulating film thus formed leads to a reduction in interface scattering of electrons at the interface between the oxide semiconductor film and the gate insulating film; so that a transistor with excellent electric characteristics can be manufactured.
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Cited Art Landscape
Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
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