Structure and formation method of semiconductor device structure
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United States of America Patent
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Jan 23, 2018
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N/A
app pub date -
Apr 4, 2017
filing date -
Aug 31, 2015
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Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. An upper portion of the fin structure includes a first surface and a second surface which is inclined to the first surface. The semiconductor device structure also includes an isolation feature surrounding a lower portion of the fin structure. The semiconductor device structure further includes a passivation layer covering the first surface and the second surface of the upper portion. The passivation layer includes a semiconductor material and has a substantially uniform thickness. In addition, the semiconductor device structure includes an interfacial layer over the passivation layer. The interfacial layer includes the semiconductor material. The interfacial layer has a first portion covering the fin structure and a second portion covering the isolation feature. The passivation layer separates the fin structure from the interfacial layer.
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