Semiconductor structure and manufacturing method for the same
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United States of America Patent
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Jan 23, 2018
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app pub date -
Jun 8, 2017
filing date -
Mar 31, 2014
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Abstract
A semiconductor structure and a manufacturing method for the same are disclosed. The semiconductor structure includes a first gate structure, a second gate structure and a second dielectric spacer. Each of the first gate structure and the second gate structure adjacent to each other includes a first dielectric spacer. The second dielectric spacer is on one of opposing sidewalls of the first gate structure and without being disposed on the dielectric spacer of the second gate structure.
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