Structure and method for 3D FinFET metal gate
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United States of America Patent
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Jan 23, 2018
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N/A
app pub date -
Apr 15, 2015
filing date -
Dec 30, 2014
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Abstract
The present disclosure provides a semiconductor structure in accordance with some embodiments. The semiconductor structure includes a semiconductor substrate; and a gate stack disposed on the semiconductor substrate; wherein the gate stack includes a high k dielectric material layer, and various metal layers disposed on the high-k dielectric material layer, wherein the gate stack has a convex top surface.
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