Semiconductor device with buried doped region and contact structure
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United States of America Patent
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Jan 23, 2018
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app pub date -
Nov 25, 2015
filing date -
Nov 28, 2014
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Abstract
A semiconductor device includes a buried doped region at a first distance to a main surface of a semiconductor body. A contact structure extends from the main surface to the doped region. The contact structure includes a contact layer formed from a metal-semiconductor alloy that directly adjoins the doped region. The contact structure further includes a fill structure formed from a metal or a conductive metal compound. An insulator structure surrounds the contact structure in cross-sections parallel to the main surface.
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