Semiconductor device and transistor cell having a diode region
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United States of America Patent
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Jan 23, 2018
Issued Date -
N/A
app pub date -
Oct 12, 2016
filing date -
May 23, 2014
priority date (Note) -
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Abstract
A transistor cell includes a drift region, a source region, and a body region arranged between the source region and the drift region in a semiconductor body. A drain region is below the drift region. An insulated gate trench extends into the drift region. A diode region extends deeper into the drift region than the insulated gate trench and partly under the insulated gate trench so as to form a pn junction with the drift region below a bottom of the insulated gate trench. The body region adjoins a first sidewall of the insulated gate trench and the diode region adjoins a second sidewall of the insulated gate trench opposite the first sidewall so that the body region of the transistor cell and a channel region including a region of the body region extending along the first sidewall are separated from the diode region by the insulated gate trench.
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