Semiconductor substrate and semiconductor device
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United States of America Patent
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Jan 23, 2018
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app pub date -
Mar 12, 2015
filing date -
Apr 18, 2014
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Abstract
A semiconductor substrate including a substrate, a buffer layer having a nitride-based semiconductor containing carbon provided on the substrate, a high-resistance layer having a nitride-based semiconductor containing carbon provided on the buffer layer, and a channel layer having a nitride-based semiconductor provided on the high-resistance layer, the high-resistance layer including a first region having carbon concentration lower than that of the buffer layer, and a second region which is provided between the first region and the channel layer, and has the carbon concentration higher than the first region. As a result, it is possible to provide the semiconductor substrate which can reduce a leak current by enhancing crystallinity of the high-resistance layer while maintaining a high resistance of the high-resistance layer, and suppress occurrence of a decrease in electron mobility or current collapse in the channel layer by likewise enhancing crystallinity of the channel layer formed on the high-resistance layer.
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