Semiconductor device and reverse conducting insulated gate bipolar transistor with isolated source zones
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United States of America Patent
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Jan 23, 2018
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app pub date -
Dec 9, 2015
filing date -
May 12, 2014
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Abstract
A semiconductor device includes a semiconductor mesa having source zones separated from each other along a longitudinal axis of the semiconductor mesa and at least one body zone forming first pn junctions with the source zones and a second pn junction with a drift zone. Electrode structures are on opposite sides of the semiconductor mesa, at least one of which includes a gate electrode configured to control a charge carrier flow through the at least one body zone. First portions of the at least one body zone are formed between the source zones and separation regions. In the separation regions, at least one of (i) a capacitive coupling between the gate electrode and the semiconductor mesa and (ii) a conductivity of majority charge carriers of the drift zone is lower than outside of the separation region.
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