Method of forming a gate spacer
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United States of America Patent
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Jan 23, 2018
Grant Date -
Jul 20, 2017
app pub date -
Jan 15, 2016
filing date -
Jan 15, 2016
priority date (Note) -
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Abstract
A method of fabricating a semiconductor device includes forming a fin feature over a substrate having a first region and a second region, forming a gate stack over the fin feature in the first region and forming a spacer layer over the gate stack in the first region and over the fin feature in the second region. The spacer layer is disposed along sidewalls of the gate stack and the fin feature, respectively. The method also includes removing the spacer layer along sidewalls of the fin feature in the second region without removing the spacer layer along sidewalls of the gate stack in the first region.
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