High-voltage transistor with high current load capacity and method for its production
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United States of America Patent
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Jan 23, 2018
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app pub date -
Feb 29, 2016
filing date -
Oct 10, 2008
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Abstract
An isolation area (10) is provided over a drift region (12) with a spacing (d) to a contact area (4) provided for a drain connection (D). The isolation area is used as an implantation mask, in order to produce a dopant profile of the drift region in which the dopant concentration increases toward the drain. The implantation of the dopant can be performed instead before the production of the isolation area, and the later production of the isolation area (10) changes the dopant profile also in a way that the dopant concentration increases toward the drain.
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