Method for fabricating semiconductor device having a silicide layer
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United States of America Patent
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Jan 23, 2018
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N/A
app pub date -
Dec 30, 2015
filing date -
May 20, 2015
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Abstract
A method for fabricating a semiconductor device is provided. The method includes forming a gate electrode and a source or drain disposed at opposite sides of the gate electrode, forming an interlayer insulating layer covering the gate electrode and the source or drain, forming a contact hole exposing the source or drain in the interlayer insulating layer, forming a silicide layer on a bottom surface of the contact hole, and forming a spacer on sidewalls of the contact hole and an upper surface of the silicide layer.
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