Semiconductor device including sense insulated-gate bipolar transistor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 23, 2018
Issued Date -
N/A
app pub date -
May 3, 2017
filing date -
May 12, 2014
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor device of the present invention includes a semiconductor layer including a main IGBT cell and a sense IGBT cell connected in parallel to each other, a first resistance portion having a first resistance value formed using a gate wiring portion of the sense IGBT cell and a second resistance portion having a second resistance value higher than the first resistance value, a gate wiring electrically connected through mutually different channels to the first resistance portion and the second resistance portion, a first diode provided between the gate wiring and the first resistance portion, a second diode provided between the gate wiring and the second resistance portion in a manner oriented reversely to the first diode, an emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the main IGBT cell, and a sense emitter electrode disposed on the semiconductor layer, electrically connected to an emitter of the sense IGBT cell.
First Claim
Other Claims data not available
Family
International Classification(s)
- 2017 Application Filing Year
- H01L Class
- 30754 Applications Filed
- 25260 Patents Issued To-Date
- 82.14 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 6 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
Maintenance Fees
| Fee | Large entity fee | small entity fee | micro entity fee | due date |
|---|---|---|---|---|
| 7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jul 23, 2025 |
| 11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jul 23, 2029 |
