Surround gate transistor device and contact structure for same
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United States of America Patent
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Jan 23, 2018
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N/A
app pub date -
Oct 28, 2016
filing date -
Aug 7, 2013
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Abstract
A semiconductor device includes a fin-shaped semiconductor layer and a pillar-shaped semiconductor layer. A diffusion layer resides in an upper portion of the fin-shaped semiconductor layer. A metal contact electrode is around the pillar-shaped semiconductor layer and a metal contact line is connected thereto. A fourth contact surrounds an upper sidewall of the pillar-shaped semiconductor layer and is connected to the metal contact electrode.
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