Non-volatile memory device with floating gate having a tip corner
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United States of America Patent
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Jan 23, 2018
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app pub date -
Dec 13, 2013
filing date -
Dec 13, 2013
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Abstract
Embodiments of mechanisms for forming a memory device structure are provided. The memory device includes a first gate stack structure. The first gate stack structure includes a first dielectric layer over a semiconductor substrate. The first gate stack structure also includes a first floating gate over the first dielectric layer, and the first floating gate has a tip corner. The first gate stack structure further includes a second dielectric layer conformally covering an upper surface and sidewalls of the first floating gate. The second dielectric layer has a substantially uniform thickness. In addition, the first gate stack structure includes a first control gate over the second dielectric layer and partially over the first floating gate.
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