Semiconductor devices, FinFET devices and methods of forming the same
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United States of America Patent
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Jan 23, 2018
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app pub date -
Jan 29, 2016
filing date -
Jan 29, 2016
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Abstract
Semiconductor devices, FinFET devices and methods of forming the same are disclosed. One of the semiconductor devices includes a substrate, a gate over the substrate and a gate dielectric layer between the gate and the substrate. The gate dielectric layer includes an oxide-inhibiting layer having a dielectric constant greater than about 8 and being in an amorphous state.
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