Transistor with hole barrier layer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 23, 2018
Issued Date -
N/A
app pub date -
Apr 30, 2015
filing date -
Apr 30, 2015
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
An apparatus includes a channel layer, a first layer, a hole barrier layer and a second layer. The channel layer may be configured to carry a drain current in response to a voltage at a gate node. The first layer may be between the channel layer and the gate node. The first layer generally has a first bandgap. The hole barrier layer may be in contact with the first layer. The hole barrier layer generally has a second bandgap that (i) forms a valence band offset relative to the first bandgap and (ii) is configured to impede holes generated in one or more of the channel layer and the first layer from reaching the gate node. The gate node may be in contact with the second layer. The apparatus generally forms a field effect transistor.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully