Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates
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United States of America Patent
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Jan 23, 2018
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app pub date -
Jul 15, 2014
filing date -
Jul 16, 2013
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Abstract
A method to remove epitaxial semiconductor layers from a substrate by growing an epitaxial sacrificial layer on the substrate where the sacrificial layer is a transition metal nitride (TMN) or a TMN ternary compound, growing one or more epitaxial device layers on the sacrificial layer, and separating the device layers from the substrate by etching the sacrificial layer to completely remove the sacrificial layer without damaging or consuming the substrate or any device layer. Also disclosed are the related semiconductor materials made by this method.
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