Method for local isolation between transistors produced on an SOI substrate, in particular an FDSOI substrate, and corresponding integrated circuit
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United States of America Patent
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Jan 23, 2018
Issued Date -
N/A
app pub date -
Dec 2, 2015
filing date -
May 29, 2015
priority date (Note) -
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Abstract
An integrated circuit may include an SOI substrate having a buried insulating layer, and a semiconductor film above the buried insulating layer. The semiconductor film may have first patterns in a first zone defining gate regions of first MOS transistors and also first dummy gate regions. The first zone may include two domains having a space therebetween, and the space may be filled by at least one insulating material and be situated between two dummy gate regions above a region of the supporting substrate without any insulating trench.
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