Structure and process to tuck fin tips self-aligned to gates
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United States of America Patent
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Jan 23, 2018
Grant Date -
Nov 24, 2016
app pub date -
May 22, 2015
filing date -
May 22, 2015
priority date (Note) -
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Abstract
A semiconductor structure is provided that includes a semiconductor fin portion having an end wall and extending upward from a substrate. A gate structure straddles a portion of the semiconductor fin portion. A first set of gate spacers is located on opposing sidewall surfaces of the gate structure; and a second set of gate spacers is located on sidewalls of the first set of gate spacers. One gate spacer of the second set of gate spacers has a lower portion that directly contacts the end wall of the semiconductor fin portion.
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