Semiconductor device and method for manufacturing same
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United States of America Patent
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Jan 23, 2018
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N/A
app pub date -
Oct 17, 2013
filing date -
Oct 19, 2012
priority date (Note) -
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Abstract
A semiconductor device (100) comprises: a semiconductor substrate (1); a drift region (2) of a first conductivity type having a trench in part of an upper portion thereof and arranged on a first main surface of the semiconductor substrate (100); an electric field reducing region (4) of a second conductivity type arranged, in a bottom portion of the trench, only around a corner portion and not in a center portion; an anode electrode (9) embedded in the trench; and a cathode electrode (10) arranged on a second main surface of the semiconductor substrate (100) which is opposite to the first main surface.
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