Photoelectric conversion device, method for manufacturing photoelectric conversion device, and electronic apparatus
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United States of America Patent
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Jan 23, 2018
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Nov 24, 2015
filing date -
Dec 5, 2014
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Abstract
An image sensor as a photoelectric conversion device includes: a lower electrode containing a high-melting-point metal; an upper electrode disposed in a layer higher than the lower electrode; a p-type semiconductor layer and an n-type semiconductor layer disposed between the lower electrode and the upper electrode; and a relay electrode containing the high-melting-point metal. The lower electrode and the relay electrode are formed in the same layer. An intermediate layer as a selenized film of the high-melting-point metal is formed on the lower electrode.
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