Image sensor and method of manufacturing the same
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United States of America Patent
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Jan 23, 2018
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app pub date -
Dec 8, 2016
filing date -
Dec 15, 2015
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Abstract
An image sensor includes a semiconductor layer including a first surface and a second surface, which are opposite to each other. A plurality of unit pixels is in the semiconductor layer. Each of the unit pixels includes a first photoelectric converter and a second photoelectric converter. A first isolation layer isolates adjacent unit pixels from one another. A second isolation layer is between the first photoelectric converter and the second photoelectric converter. The first isolation layer has a different shape from the second isolation layer.
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