Image sensor having vertical transfer gate and method for fabricating the same
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United States of America Patent
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Jan 23, 2018
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N/A
app pub date -
Sep 15, 2015
filing date -
Jun 9, 2015
priority date (Note) -
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Abstract
The present disclosure provides an image sensor. An image sensor may include: a transfer gate formed over a first substrate, and having a through-hole; a column-shaped epitaxial body having a first portion filled in the through-hole and a second portion formed over the transfer gate; a photoelectric conversion element formed in the second portion of the epitaxial body; and a floating diffusion region formed in the first substrate, and contacting the first portion of the epitaxial body.
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