Image sensor having vertical transfer gate and method for fabricating the same

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United States of America Patent

PATENT NO 9876042
SERIAL NO

14855160

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present disclosure provides an image sensor. An image sensor may include: a transfer gate formed over a first substrate, and having a through-hole; a column-shaped epitaxial body having a first portion filled in the through-hole and a second portion formed over the transfer gate; a photoelectric conversion element formed in the second portion of the epitaxial body; and a floating diffusion region formed in the first substrate, and contacting the first portion of the epitaxial body.

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Patent Owner(s)

Patent OwnerAddress
SK HYNIX INCGYEONGGI-DO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hwang, Sun-Ha Gyeonggi-do, KR 10 66
Hwang, Sung-Bo Gyeonggi-do, KR 3 18
Yoo, Kyung-Dong Gyeonggi-do, KR 3 18

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Patent Citation Ranking

  • 8 Citation Count
  • H01L Class
  • 23.71 % this patent is cited more than
  • 7 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3689997611243481558461392216162801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +05001000150020002500300035004000450050005500600065007000750080008500900095001000010500

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