Semiconductor device and method for manufacturing same
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United States of America Patent
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Jan 23, 2018
Issued Date -
N/A
app pub date -
Dec 12, 2016
filing date -
Aug 24, 2016
priority date (Note) -
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Abstract
A semiconductor device comprises a channel body, a pair of source drain regions provided on the channel body and a gate electrode provided above a part of the channel body between the source drain regions. The semiconductor device further comprises a first insulating layer covering the source drain regions and the gate electrode; contact bodies extending in the first insulating layer electrically connected to the source drain regions respectively; and a silicide layer provided between one of the source drain regions and one of the contact bodies electrically connected thereto. The one of the contact bodies includes a main part extending in the first insulating layer, and an expanded portion expanded along a surface of the one of the source drain regions; and the silicide layer is positioned between the expanded portion and the one of the source drain regions.
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