Semiconductor memory device

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United States of America Patent

PATENT NO 9876029
APP PUB NO 20170278862A1
SERIAL NO

15266416

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Abstract

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A semiconductor memory device according to an embodiment comprises: a plurality of memory strings arranged in a first direction intersecting a surface of a semiconductor substrate, each of the memory strings including a plurality of memory transistors connected in series in a second direction along the surface of the semiconductor substrate; a source side select transistor connected to one end of the memory string; a drain side select transistor connected to the other end of the memory string; a plurality of source lines respectively connected, via the source side select transistor, to each of the plurality of memory strings arranged along the first direction; a bit line commonly connected, via the drain side select transistor, to the plurality of memory strings arranged along the first direction; a word line connected to a gate electrode of the memory transistor; and a layer selector disposed between the source line and the source side select transistor and commonly connected to the plurality of memory strings arranged along the first direction.

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Patent Owner(s)

Patent OwnerAddress
TOSHIBA MEMORY CORPORATION1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 105-0023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aochi, Hideaki Yokkaichi, JP 248 12462
Fujiki, Jun Mie, JP 79 468
Kamigaichi, Takeshi Yokkaichi, JP 91 1715

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