Method of manufacturing semiconductor device
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United States of America Patent
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Jan 23, 2018
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N/A
app pub date -
Dec 8, 2015
filing date -
Jul 10, 2015
priority date (Note) -
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Abstract
The present disclosure provides a method of manufacturing a semiconductor device with a controlled doped concentration of a channel film that is run-through a plurality of memory stacks. In one aspect of the present disclosure, the method may include forming a hole, forming a channel film on an inner surface of the hole, forming a buffer film on an inner surface of the channel film, forming a dopant supply film to fill the hole, and doping the channel film via a dopant diffusion from the dopant supply film into the channel film.
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