Semiconductor structure and method of manufacturing the same
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United States of America Patent
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Jan 23, 2018
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app pub date -
Dec 28, 2015
filing date -
Dec 28, 2015
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Abstract
A semiconductor structure and a method of manufacturing the same are provided. The semiconductor structure includes a stack including first conductive layers and first dielectric layers, a second conductive layer formed on the stack, openings through the second conductive layer and the stack, and through structures formed in the openings, respectively. Each through structure includes a memory layer, a gate dielectric layer, a channel layer, a dielectric material and a pad. The channel layer is isolated from the stack by the memory layer, the channel layer is isolated from the second conductive layer by the gate dielectric layer, and the memory layer and the gate dielectric layer have different compositions.
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