Method for manufacturing semiconductor device

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United States of America Patent

PATENT NO 9876022
SERIAL NO

15449689

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Abstract

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A method for manufacturing a semiconductor device includes forming a resist film on a film to be processed. An upper portion of the film to be processed is processed using the resist film as a first mask. Tungsten or a tungsten compound is selectively formed on the resist film. A lower portion of the film to be processed is processed with a reducing gas using the tungsten or the tungsten compound as a second mask.

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Patent Owner(s)

Patent OwnerAddress
KIOXIA CORPORATIONTOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hasegawa, Tomo Yokkaichi Mie, JP 7 6
Matsuda, Kazuhisa Yokkaichi Mie, JP 83 542
Omura, Mitsuhiro Kuwana Mie, JP 48 801
Sasaki, Toshiyuki Yokkaichi Mie, JP 131 776

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