Method for manufacturing semiconductor device
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United States of America Patent
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-
Jan 23, 2018
Grant Date -
N/A
app pub date -
Mar 3, 2017
filing date -
Sep 23, 2016
priority date (Note) -
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status (Latency Note)
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Abstract
A method for manufacturing a semiconductor device includes forming a resist film on a film to be processed. An upper portion of the film to be processed is processed using the resist film as a first mask. Tungsten or a tungsten compound is selectively formed on the resist film. A lower portion of the film to be processed is processed with a reducing gas using the tungsten or the tungsten compound as a second mask.
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Patent Citation Ranking
- 1 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
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