Single die output power stage using trench-gate low-side and LDMOS high-side MOSFETs, structure and method
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United States of America Patent
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Jan 23, 2018
Issued Date -
N/A
app pub date -
Nov 30, 2015
filing date -
Dec 23, 2008
priority date (Note) -
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status (Latency Note)
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Abstract
A voltage converter includes an output circuit having a high-side device and a low-side device which can be formed on a single die (a “PowerDie”). The high-side device can include a lateral diffused metal oxide semiconductor (LDMOS) while the low-side device can include a trench-gate vertical diffused metal oxide semiconductor (VDMOS). The voltage converter can further include a controller circuit on a different die which can be electrically coupled to, and co-packaged with the output circuit.
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International Classification(s)
- 2015 Application Filing Year
- H01L Class
- 25498 Applications Filed
- 22451 Patents Issued To-Date
- 88.06 % Issued To-Date
Cited Art Landscape
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- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 7 Age
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