Semiconductor device
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United States of America Patent
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Jan 23, 2018
Issued Date -
N/A
app pub date -
Sep 6, 2016
filing date -
Nov 20, 2015
priority date (Note) -
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Abstract
A semiconductor device comprising:
- a first semiconductor region of a first conductivity type;a second semiconductor region of a second conductivity type provided on the first semiconductor region;an insulating portion provided on the first semiconductor region;a third semiconductor region of the second conductivity type provided on the second semiconductor region and having a higher carrier concentration of the second conductivity type than that of the second semiconductor region; anda first electrode provided on the insulating portion and the third semiconductor region, the first electrode having a portion which is aligned with the second semiconductor region in a second direction perpendicular to a first direction being from the first semiconductor region to the second semiconductor region, and the first electrode being in contact with the second semiconductor region and the third semiconductor region.
First Claim
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Family
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Country | kind | publication No. | Filing Date | Type | Sub-Type |
---|---|---|---|---|---|
JP | B2 | JP6694375 | Nov 17, 2016 | Patent | Grant |
Type : Patent Sub-Type : Grant | |||||
PUBLISHED GRANTED PATENT (SECOND LEVEL) | 半導体装置 | May 13, 2020 |
- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
KABUSHIKI KAISHA TOSHIBA | MINATO-KU TOKYO 105-8001 |
International Classification(s)

- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Matsushita, Kenichi | Nonoichi Ishikawa, JP | 40 | 314 |
# of filed Patents : 40 Total Citations : 314 | |||
Nakamura, Kazutoshi | Nonoichi Ishikawa, JP | 115 | 1117 |
# of filed Patents : 115 Total Citations : 1117 |
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Patent Citation Ranking
- 2 Citation Count
- H01L Class
- 23.71 % this patent is cited more than
- 7 Age
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
---|---|---|---|---|
7.5 Year Payment | $3600.00 | $1800.00 | $900.00 | Jul 23, 2025 |
11.5 Year Payment | $7400.00 | $3700.00 | $1850.00 | Jul 23, 2029 |
Fee | Large entity fee | small entity fee | micro entity fee |
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Surcharge - 7.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
Surcharge - 11.5 year - Late payment within 6 months | $160.00 | $80.00 | $40.00 |
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
Full Text
US Patent No: 9876011
Semiconductor device
Abstract
A semiconductor device comprising:
- a first semiconductor region of a first conductivity type;a second semiconductor region of a second conductivity type provided on the first semiconductor region;an insulating portion provided on the first semiconductor region;a third semiconductor region of the second conductivity type provided on the second semiconductor region and having a higher carrier concentration of the second conductivity type than that of the second semiconductor region; anda first electrode provided on the insulating portion and the third semiconductor region, the first electrode having a portion which is aligned with the second semiconductor region in a second direction perpendicular to a first direction being from the first semiconductor region to the second semiconductor region, and the first electrode being in contact with the second semiconductor region and the third semiconductor region.
Description
Claims
Claims data not available

Legal Events
Date | Code | Event | Description |
---|---|---|---|
Dec 07, 2020 | MAFP | MAINTENANCE FEE PAYMENT | free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY year of fee payment: 4 |
Jan 23, 2018 | I | Issuance | |
Jan 03, 2018 | STCF | INFORMATION ON STATUS: PATENT GRANT | free format text: PATENTED CASE |
May 25, 2017 | P | Published | |
Sep 06, 2016 | F | Filing | |
Aug 30, 2016 | AS | ASSIGNMENT | free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MATSUSHITA, KENICHI;NAKAMURA, KAZUTOSHI;REEL/FRAME:039636/0278 Owner name: KABUSHIKI KAISHA TOSHIBA, JAPAN Effective Date: Aug 30, 2016 |
Nov 20, 2015 | PD | Priority Date |

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