Resistor disposed directly upon a sac cap of a gate structure of a semiconductor structure
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United States of America Patent
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Jan 23, 2018
Issued Date -
N/A
app pub date -
Nov 3, 2016
filing date -
Nov 3, 2016
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Abstract
A semiconductor structure includes a substrate. A gate structure is disposed over the substrate. The gate structure includes:
- a pair of gate spacers extending generally vertically from the substrate,gate metal disposed between the spacers, anda self-aligned contact (SAC) cap disposed over the gate metal to form a top of the gate structure.A resistor is disposed directly upon the SAC cap such that no additional layer is disposed between the resistor and SAC cap. The resistor is composed of a material suitable to provide a predetermined resistance to a current to be conducted therethrough. A pair of resistor contacts are electrically connected to the resistor and spaced to provide the predetermined resistance to the current.
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