Semiconductor device structure

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United States of America Patent

PATENT NO 9875989
SERIAL NO

14993603

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Abstract

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A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a first surface and a second surface. The semiconductor substrate has an active region. The semiconductor substrate is doped with first dopants with a first-type conductivity. The active region is adjacent to the first surface and doped with second dopants with a second-type conductivity. The semiconductor device structure includes a doped layer over the second surface and doped with third dopants with the first-type conductivity. A first doping concentration of the third dopants in the doped layer is greater than a second doping concentration of the first dopants in the semiconductor substrate. The semiconductor device structure includes a conductive bump over the doped layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Hsun-Ying Tainan, TW 87 508
Kao, Min-Feng Chiayi, TW 157 930
Lin, Jeng-Shyan Tainan, TW 115 1246
Liu, Jen-Cheng Hsinchu, TW 424 4064
Yaung, Dun-Nian Taipei, TW 608 6886

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