Switching device

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United States of America Patent

PATENT NO 9875976
APP PUB NO 20170194269A1
SERIAL NO

14985393

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Abstract

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A semiconductor device includes a first doping region, a second doping region, and a channel region. The first doping region is doped with a first type of dopant. The second doping region is doped with the first type of dopant. The channel region is doped with a second type of dopant, wherein the channel region is configured to have a first region with a first concentration of the second type of dopant and a second region with a second concentration of the second type of dopant, and the second concentration is higher than the first concentration.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

International Classification(s)

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  • 2015 Application Filing Year
  • H01L Class
  • 25498 Applications Filed
  • 22451 Patents Issued To-Date
  • 88.06 % Issued To-Date
Click to zoom InYear of Issuance% of Matters IssuedCumulative IssuancesYearly Issuances20152016201720182019202020212022202320240255075100

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Jin, Jun-De Hsinchu, TW 53 383

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  • H01L Class
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges3689997611243481558461392216162801 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +05001000150020002500300035004000450050005500600065007000750080008500900095001000010500

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