Semiconductor device structure and method for forming the same
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 23, 2018
Issued Date -
N/A
app pub date -
Jul 14, 2016
filing date -
Jul 14, 2016
priority date (Note) -
In Force
status (Latency Note)
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Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a first device. The semiconductor device structure includes a conductive element over the first device. The semiconductor device structure includes a first conductive shielding layer between the first device and the conductive element. The first conductive shielding layer has openings, and a maximum width of the opening is less than a wavelength of an energy generated by the first device.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
---|---|---|
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD | 8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78 |
International Classification(s)

- 2016 Application Filing Year
- H01L Class
- 27971 Applications Filed
- 23507 Patents Issued To-Date
- 84.05 % Issued To-Date
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Chang, Shou-Zen | New Taipei, TW | 81 | 733 |
# of filed Patents : 81 Total Citations : 733 | |||
Hsu, Sen-Kuei | Kaohsiung, TW | 44 | 147 |
# of filed Patents : 44 Total Citations : 147 | |||
Huang, Chi-Ming | Changhua, TW | 46 | 194 |
# of filed Patents : 46 Total Citations : 194 | |||
Pan, Hsin-Yu | Taipei, TW | 91 | 444 |
# of filed Patents : 91 Total Citations : 444 | |||
Pu, Han-Ping | Taichung, TW | 158 | 2964 |
# of filed Patents : 158 Total Citations : 2964 | |||
Wan, Albert | Hsinchu, TW | 39 | 306 |
# of filed Patents : 39 Total Citations : 306 | |||
Wu, Kai-Chiang | Hsinchu, TW | 189 | 1064 |
# of filed Patents : 189 Total Citations : 1064 |
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- 0 Citation Count
- H01L Class
- 0 % this patent is cited more than
- 7 Age
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