Semiconductor device structure and method for forming the same

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United States of America Patent

PATENT NO 9875972
SERIAL NO

15210067

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Abstract

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A semiconductor device structure is provided. The semiconductor device structure includes a first device. The semiconductor device structure includes a conductive element over the first device. The semiconductor device structure includes a first conductive shielding layer between the first device and the conductive element. The first conductive shielding layer has openings, and a maximum width of the opening is less than a wavelength of an energy generated by the first device.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Shou-Zen New Taipei, TW 81 733
Hsu, Sen-Kuei Kaohsiung, TW 44 147
Huang, Chi-Ming Changhua, TW 46 194
Pan, Hsin-Yu Taipei, TW 91 444
Pu, Han-Ping Taichung, TW 158 2964
Wan, Albert Hsinchu, TW 39 306
Wu, Kai-Chiang Hsinchu, TW 189 1064

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