Guard rings including semiconductor fins and regrown regions
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United States of America Patent
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Jan 23, 2018
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N/A
app pub date -
Dec 5, 2016
filing date -
Oct 4, 2012
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Abstract
A method includes forming a gate stack over a semiconductor fin, wherein the semiconductor fin forms a ring, and etching a portion of the semiconductor fin not covered by the gate stack to form a recess. The method further includes performing an epitaxy to grow an epitaxy semiconductor region from the recess, forming a first contact plug overlying and electrically coupled to the epitaxy semiconductor region, and forming a second contact plug, wherein the second contact plug is overlying and electrically coupled to the gate stack.
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