Method for fabricating semiconductor device
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United States of America Patent
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Jan 23, 2018
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N/A
app pub date -
Oct 11, 2016
filing date -
Sep 12, 2016
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Abstract
A method for fabricating semiconductor device is disclosed. First, a first fin-shaped structure and a second fin-shaped structure are formed on a substrate, and a shallow trench isolation (STI) is formed around the first fin-shaped structure and the second fin-shaped structure, a patterned hard mask is formed on the STI. Next, part of the first fin-shaped structure and part of the second fin-shaped structure adjacent to two sides of the patterned hard mask are removed for forming a first recess and a second recess, and a dielectric material is formed into the first recess and the second recess.
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