Methods of forming uniform and pitch independent fin recess
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United States of America Patent
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Jan 23, 2018
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app pub date -
Dec 8, 2016
filing date -
Dec 8, 2016
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Abstract
Methods of fabricating integrated circuit devices for forming uniform and well controlled fin recesses are disclosed. One method includes, for instance: obtaining an intermediate semiconductor structure having a substrate, at least one fin disposed on the substrate, at least one gate structure positioned over the at least one fin, and at least one oxide layer disposed on the substrate and about the at least one fin and the at least one gate structure; implanting germanium (Ge) in a first region of the at least one fin; and removing the first region of the at least one fin implanted with Ge.
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