Method for forming semiconductor structure with nanowire structures
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United States of America Patent
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Jan 23, 2018
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Nov 21, 2016
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Feb 6, 2015
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Abstract
The present invention provides a method for forming a semiconductor structure. Firstly, a substrate is provided, the substrate comprises an insulating layer and at least one first nano channel structure disposed thereon, a first region and a second region being defined on the substrate, next, a hard mask is formed within the first region, afterwards, an etching process is performed, to remove parts of the insulating layer within the second region, an epitaxial process is then performed, to form an epitaxial layer on the first nano channel structure, and an anneal process is performed, to transform the first nano channel structure and the epitaxial layer into a first nanowire structure, wherein the diameter of the first nanowire structure within the first region is different from the diameter of the first nanowire structure within the second region.
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