Spacer defined fin growth and differential fin width
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United States of America Patent
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Jan 23, 2018
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app pub date -
Nov 10, 2016
filing date -
Nov 10, 2016
priority date (Note) -
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Abstract
Methods for forming fins with a straight profile by preventing fin bending during STI fill and annealing are disclosed. Embodiments include providing STI regions separated by Si regions, each topped with a hardmask; planarizing the STI regions; removing the hardmask over a portion of the Si regions, forming recesses; forming a conformal spacer layer over the STI regions and in the recesses; removing horizontal portions of the spacer layer; epitaxially growing Si in each recess, forming fins; and etching the STI regions and a remainder of the spacer layer down to the Si regions to reveal the fins.
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