Semiconductor device and a method for forming a semiconductor device
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United States of America Patent
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Jan 23, 2018
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app pub date -
Feb 26, 2016
filing date -
Feb 26, 2016
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Abstract
A method for forming a semiconductor device comprises forming an insulation trench structure comprising insulation material extending into the semiconductor substrate from a surface of the semiconductor substrate. The insulation trench structure laterally surrounds a portion of the semiconductor substrate. The method further comprises modifying the laterally surrounded portion of the semiconductor substrate to form a vertical electrically conductive structure comprising an alloy material. The alloy material is an alloy of the semiconductor substrate material and at least one metal.
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