Substrates with buried isolation layers and methods of formation thereof
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United States of America Patent
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Jan 23, 2018
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app pub date -
Nov 29, 2015
filing date -
Nov 29, 2015
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Abstract
A method for fabricating a semiconductor device includes forming an opening in a first epitaxial lateral overgrowth region to expose a surface of the semiconductor substrate within the opening. The method further includes forming an insulation region at the exposed surface of the semiconductor substrate within the opening and filling the opening with a second semiconductor material to form a second epitaxial lateral overgrowth region using a lateral epitaxial growth process.
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